elektronische bauelemente ssf1321p -1.7a, -20v, r ds(on) 0.079 ? p-channel mosfet 20-nov-2013 rev. c page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low rds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sot-323 saves board space. ? fast switching speed. ? high performance trench technology. package information package mpq leader size sot-323 3k 7 inch maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit drain ? source voltage v ds -20 v gate ? source voltage v gs 8 v i d @ t a =25c -1.7 continuous drain current 1 i d @ t a =70c -1.4 a pulsed drain current 2 i dm -2.5 a continuous source current (diode conduction) 1 i s 0.28 a p d @ t a =25c 0.34 power dissipation 1 p d @ t a =70c 0.22 w operating junction & st orage temperature range t j , t stg -55~150 c thermal resistance ratings t Q 5 sec 375 maximum thermal resistance junction-ambient 1 steady-state r ja 430 c / w note: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. sot-323 top view a l c b d g h j f k e 1 2 3 1 2 3 millimete r millimete r ref. min. max. ref. min. max. a 1.80 2.20 g 0.1 ref. b 1.80 2.45 h 0.525 ref. c 1.1 1.4 j 0.08 0.25 d 0.80 1.10 k 0.8 typ. e 1.20 1.40 l 0.65 typ. f 0.15 0.40
elektronische bauelemente ssf1321p -1.7a, -20v, r ds(on) 0.079 ? p-channel mosfet 20-nov-2013 rev. c page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage v gs(th) -0.4 - - v v ds = v gs, i d = -250 a gate-source leakage current i gss - - 100 na v ds = 0v, v gs = 8v - - -1 v ds = -16v, v gs = 0v zero gate voltage drain current i dss - - -10 a v ds = -16v, v gs = 0v, t j = 55c on-state drain current 1 i d(on) -5 - - a v ds = -5v, v gs = -4.5v - - 79 v gs = -4.5v, i d = -1.7a drain-source on-resistance 1 r ds(on) - - 110 m ? v gs = -2.5v, i d = -1.5a forward transconductance 1 g fs - 9 - s v ds = -5v, i d = -1.25a diode forward voltage v sd - -0.65 - v i s = -0.46a, v gs = 0v dynamic 2 total gate charge q g - 7.2 - gate-source charge q gs - 1.7 - gate-drain charge q gd - 1.5 - nc v ds = -10v v gs = -4.5v i d = -1.7a turn-on delay time t d(on) - 10 - rise time t r - 9 - turn-off delay time t d(off) - 27 - fall time t f - 11 - ns v dd = -10v i l = -1a v gen = -4.5v r g = 6 ? notes 1. pulse test pw Q 300us duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing. 3. repetitive rating, pulse width limited by junction temperature.
elektronische bauelemente ssf1321p -1.7a, -20v, r ds(on) 0.079 ? p-channel mosfet 20-nov-2013 rev. c page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente ssf1321p -1.7a, -20v, r ds(on) 0.079 ? p-channel mosfet 20-nov-2013 rev. c page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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